Chung-Hua University Repository:Item 987654321/37525
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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37525


    Title: Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
    Authors: 吳建宏
    rossiwu
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: Ge;high-$kappa$ gate dielectric;laser annealing
    Date: 2010
    Issue Date: 2014-07-01 10:33:27 (UTC+8)
    Abstract: To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ~105 forwardreverse current in the source-drain n+/p junction. The laser-annealed gate-fi
    Appears in Collections:[Department of Microelectronics] Journal Articles

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