The effect of oxgen species on the ZnO TFT prepared by atmosphere pressure plasma jet

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题名:	The effect of oxgen species on the ZnO TFT prepared by atmosphere pressure plasma jet
作者:	吳建宏 rossiwu
贡献者:	電子工程學系 Electronics Engineering
关键词:	ZnO;atmosphere pressure plasma jet
日期:	2012
上传时间:	2014-07-01 10:31:56 (UTC+8)
摘要:	Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxy
显示于类别:	[電子工程學系] 期刊論文

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