The effect of oxgen species on the ZnO TFT prepared by atmosphere pressure plasma jet

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Title:	The effect of oxgen species on the ZnO TFT prepared by atmosphere pressure plasma jet
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	ZnO;atmosphere pressure plasma jet
Date:	2012
Issue Date:	2014-07-01 10:31:56 (UTC+8)
Abstract:	Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxy
Appears in Collections:	[Department of Microelectronics] Journal Articles

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