Chung-Hua University Repository:Item 987654321/37507
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 8557/14866 (58%)
Visitors : 1417256      Online Users : 1673
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37507


    Title: Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectric
    Authors: 吳建宏
    rossiwu
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: Al2O3;atmospheric pressure plasma jet;APPJ;indium–gallium–zinc oxide;IGZO;nonvacuum;plasmaenhanced atomic layer deposition;PE-ALD
    Date: 2012
    Issue Date: 2014-07-01 10:31:32 (UTC+8)
    Abstract: This letter proposes a novel atmospheric pressure
    plasma jet (APPJ) method for indium–gallium–zinc-oxide (IGZO)
    deposition and use of the plasma-enhanced atomic layer deposition
    (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple
    APPJ system was dem
    Appears in Collections:[Department of Microelectronics] Journal Articles

    Files in This Item:

    File Description SizeFormat
    p_i403_0102.pdf26KbAdobe PDF316View/Open


    All items in CHUR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback