研究微波退火對氮化鈦參雜的活化與熱穩定性的議題,低溫製程可以抑制TiN材料的功函數飄移. In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, a
