Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

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Title:	Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	微波退火;參雜活化;熱穩定度;氮化鈦 Microwave Annealing;Dopant Activation;Thermal Stability;TiN
Date:	2012
Issue Date:	2014-07-01 10:30:53 (UTC+8)
Abstract:	研究微波退火對氮化鈦參雜的活化與熱穩定性的議題,低溫製程可以抑制TiN材料的功函數飄移. In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, a
Appears in Collections:	[Department of Microelectronics] Journal Articles

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