Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicom-doping conditions

Chung-Hua University Repository > 工學院 > 機械工程學系 > 期刊論文 > Item 987654321/34985

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://chur.chu.edu.tw/handle/987654321/34985

题名:	Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicom-doping conditions
作者:	馬廣仁 Ma, Kung-Jen
贡献者:	機械工程學系 Mechanical Engineering
关键词:	carrier localization Nanostructures InGaNÕGaN carrier localization Nanostructures InGaNÕGaN
日期:	2004
上传时间:	2014-06-27 03:15:54 (UTC+8)
摘要:	The results of photoluminescence ~PL!, detection-energy-dependent photoluminescence excitation ~DEDPLE!, excitation-energy-dependent photoluminescence ~EEDPL!, and strain state analysis ~SSA! of three InGaN/GaN quantum-well ~QW! samples with silicon dopin The results of photoluminescence ~PL!, detection-energy-dependent photoluminescence excitation ~DEDPLE!, excitation-energy-dependent photoluminescence ~EEDPL!, and strain state analysis ~SSA! of three InGaN/GaN quantum-well ~QW! samples with silicon dopin
显示于类别:	[機械工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
p_m211_0340.pdf		25Kb	Adobe PDF	122	检视/开启

在CHUR中所有的数据项都受到原著作权保护.