Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicom-doping conditions

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Title:	Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicom-doping conditions
Authors:	馬廣仁 Ma, Kung-Jen
Contributors:	機械工程學系 Mechanical Engineering
Keywords:	carrier localization Nanostructures InGaNÕGaN carrier localization Nanostructures InGaNÕGaN
Date:	2004
Issue Date:	2014-06-27 03:15:54 (UTC+8)
Abstract:	The results of photoluminescence ~PL!, detection-energy-dependent photoluminescence excitation ~DEDPLE!, excitation-energy-dependent photoluminescence ~EEDPL!, and strain state analysis ~SSA! of three InGaN/GaN quantum-well ~QW! samples with silicon dopin The results of photoluminescence ~PL!, detection-energy-dependent photoluminescence excitation ~DEDPLE!, excitation-energy-dependent photoluminescence ~EEDPL!, and strain state analysis ~SSA! of three InGaN/GaN quantum-well ~QW! samples with silicon dopin
Appears in Collections:	[Department of Mechanical Engineering] Journal Articles

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