Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs

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題名:	Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs
作者:	吳建宏 rossiwu
貢獻者:	電子工程學系 Electronics Engineering
關鍵詞:	ALD MOSFET
日期:	2009
上傳時間:	2014-06-27 02:31:56 (UTC+8)
摘要:	The use of HfSiON as gate dielectric for advanced CMOS technology is attracting much attention due to good mobility of electrons/holes and significant reduction of gate leakage. However, there are critical reliability concerns as trade-offs to its good ch
顯示於類別:	[電子工程學系] 研討會論文

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