Resistance switching in the Ni/HfOx/Ni nonvolatile memory device with interfacial layer by mixed CF4/O2 plasma treatment

Chung-Hua University Repository > 工學院 > 電子工程學系 > 研討會論文 > Item 987654321/33763

請使用永久網址來引用或連結此文件: http://chur.chu.edu.tw/handle/987654321/33763

題名:	Resistance switching in the Ni/HfOx/Ni nonvolatile memory device with interfacial layer by mixed CF4/O2 plasma treatment
作者:	賴瓊惠 Lai, Chiung-Hui
貢獻者:	電子工程學系 Electronics Engineering
關鍵詞:	電阻切換;電漿處理 Resistance switching;plasma treatment
日期:	2011
上傳時間:	2014-06-27 02:29:49 (UTC+8)
摘要:	鎳/氧化铪/鎳經過電漿處理後的電阻切換 Resistance random access memory (ReRAM) is a promising candidate for nonvolatile memories applications due to its adventages, such as simple structure, rapid operation and high density integration. However, for ReRAM device, the stable resistance changes
顯示於類別:	[電子工程學系] 研討會論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
s_I403_0154.pdf		29Kb	Adobe PDF	151	檢視/開啟

在CHUR中所有的資料項目都受到原著作權保護.