Resistance switching in the Ni/HfOx/Ni nonvolatile memory device with interfacial layer by mixed CF4/O2 plasma treatment

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Title:	Resistance switching in the Ni/HfOx/Ni nonvolatile memory device with interfacial layer by mixed CF4/O2 plasma treatment
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	電阻切換;電漿處理 Resistance switching;plasma treatment
Date:	2011
Issue Date:	2014-06-27 02:29:49 (UTC+8)
Abstract:	鎳/氧化铪/鎳經過電漿處理後的電阻切換 Resistance random access memory (ReRAM) is a promising candidate for nonvolatile memories applications due to its adventages, such as simple structure, rapid operation and high density integration. However, for ReRAM device, the stable resistance changes
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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