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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33718


    Title: Effects of sensitivity enhancement by oxide passivation layer on SGOI nanowire fabrication
    Authors: 賴瓊惠
    Lai, Chiung-Hui
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: 矽鍺;鍺濃縮;奈米線;生物感測器
    SiGe;Ge-condendation;Nanowire;Bisosensor
    Date: 2012
    Issue Date: 2014-06-27 02:28:56 (UTC+8)
    Abstract: 氧化層保護層增強矽鍺奈米線的靈敏度
    Abstract—Increasing the fraction of Ge in SiGe-on-Insulator
    (SGOI) using Ge condensation by oxidation significantly
    increases hole mobility. This effect can be exploited to
    improve the sensitivity of SGOI nanowire. However, our
    previous studies found that
    Appears in Collections:[Department of Microelectronics] Seminar Papers

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