Chung-Hua University Repository:Item 987654321/37521
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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37521


    Title: Defect Density Extraction of high-κ Dielectric Gate Stack by Combining Charge Pumping and Low Frequency Measurement
    Authors: 吳建宏
    rossiwu
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: high-κ dielectric;HfSiON;charge pumping;low frequency noise
    Date: 2009
    Issue Date: 2014-07-01 10:33:01 (UTC+8)
    Abstract: We demonstrate a technique to plot the depth distribution of defect density inside the gate dielectric stack of advanced high-κ CMOSFETs by combining analysis results of frequency-dependent charge pumping and low frequency noise measurement. It shows that
    Appears in Collections:[Department of Microelectronics] Journal Articles

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