Characterization of Hf1-xZrxO2 Gate Dielectrics with 0 <= x <= 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

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題名:	Characterization of Hf1-xZrxO2 Gate Dielectrics with 0 <= x <= 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
作者:	吳建宏 rossiwu
貢獻者:	電子工程學系 Electronics Engineering
關鍵詞:	ZrO2;HfO2;ALD
日期:	2012
上傳時間:	2014-07-01 10:32:22 (UTC+8)
摘要:	In this work, we investigated the influence of incorporating zirconia (ZrO2) in HfO2 gate dielectric on the electrical properties and reliability of n-channel metal oxide semiconductor field effect transistors (nMOSFETs). Detailed film physical, chemical
顯示於類別:	[電子工程學系] 期刊論文

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