Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment

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题名:	Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment
作者:	吳建宏 rossiwu
贡献者:	電子工程學系 Electronics Engineering
关键词:	HfAlOx;MIS Capacitor;Dual Plasma Treatment
日期:	2012
上传时间:	2014-07-01 10:32:09 (UTC+8)
摘要:	HfO2 is considered a promising gate dielectric material for sub-45 nm CMOS technology. It has been reported that incorporate Al into HfO2 forming Hf aluminates in order to increase the crystallization temperature. However, the growth of the low-k interfac
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