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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37509


    Title: The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jet
    Authors: 吳建宏
    rossiwu
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: IGZO
    Date: 2012
    Issue Date: 2014-07-01 10:31:43 (UTC+8)
    Abstract: We fabricated bottom gate TFTs with IGZO channel layer
    deposited by atmospheric pressure plasma jet (APPJ). The effect of
    thermal annealing on the properties of IGZO TFTs was studied.
    After post annealing, the IGZO thin films showed a smooth and
    dense str
    Appears in Collections:[Department of Microelectronics] Journal Articles

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