Low Driving Voltage Amorphous In-Ga-Zn-O Thin Film Transistors with Small Subthreshold Swing Using High-κ Hf-Si-O Dielectrics

CHUR > College of Engineering > Department of Microelectronics > Journal Articles > Item 987654321/37503

Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37503

Title:	Low Driving Voltage Amorphous In-Ga-Zn-O Thin Film Transistors with Small Subthreshold Swing Using High-κ Hf-Si-O Dielectrics
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	Thin Film Transistors High-κ
Date:	2010
Issue Date:	2014-07-01 10:31:06 (UTC+8)
Abstract:	Low driving voltage thin-film transistors (TFTs) were fabricated by integrating both a sputtered high-κ Hf–Si–O gate dielectric and an amorphous In–Ga–Zn–O active layer on a silicon substrate. The influence of postdeposition annealing (PDA) temperature fo
Appears in Collections:	[Department of Microelectronics] Journal Articles

Files in This Item:

File	Description	Size	Format
p_i403_0100.pdf		26Kb	Adobe PDF	105	View/Open