Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

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Title:	Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	非揮發性記憶體;含氮氧化層 SOHOS;NVM;Oxynitride
Date:	2011
Issue Date:	2014-07-01 10:29:48 (UTC+8)
Abstract:	穩健穿隧含氮氧化層改善了SOHOS型的非揮發性記憶體的持久性質 In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal–oxide–semiconductor field-effect transistor (nMOSFETs) and polycrystalline sil
Appears in Collections:	[Department of Microelectronics] Journal Articles

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