Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device
with CF4/O2 Plasma Post-treatment

CHUR > College of Engineering > Department of Microelectronics > Journal Articles > Item 987654321/37488

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Title:	Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O2 Plasma Post-treatment
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	電阻式;電漿後處理 Resistance Switching;Plasma Post-treatment
Date:	2012
Issue Date:	2014-07-01 10:29:33 (UTC+8)
Abstract:	電阻轉換機制的關鍵在於ReRAM中絕緣層的品質、變化及其組成的結構在薄膜內所產生的改變，決定了整個電阻式記憶體的特性、耐久力(Endurance)與保持力(Retention)，所以可藉由調整薄膜的製程中的參數或對薄膜進行某些後段處理來觀察薄膜特性的差異和電性，再以整體的ReRAM電性量測來觀察薄膜的差異對ReRAM的改變與影響，從中找出最佳值，以改善ReRAM的各項特性。故本計劃主要討論電漿處理對二氧化鉿電阻式記憶體的影響性，藉此比較對元件良率提昇的幫助以及對抑制電阻轉換參數分散的情形。 The resistance switching characteristics of Ni/HfOx /Ni capacitor structures with CF4/O2 plasma post-treatment of different gas flow rate ratios were investigated. The HfOx film was deposited by an electron-gun evaporator, followed by the CF4/O2 plasma po
Appears in Collections:	[Department of Microelectronics] Journal Articles

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