Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors

CHUR > College of Management > Department of Transportation Technology and Logistice Management > Journal Articles > Item 987654321/35985

Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/35985

Title:	Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors
Authors:	羅仕京 Lo, Shih-Ching
Contributors:	運輸科技與物流管理學系 Transportation Technology and Logistics Management
Keywords:	Analytical solution;Poisson equation;Surface potential;Double-gate MOSFET
Date:	2007
Issue Date:	2014-06-27 10:59:27 (UTC+8)
Abstract:	In this paper, an analytical solution of the Poisson equation for double-gate metal-semiconductor-oxide field effect transistor (MOSFET) is presented, where explicit surface potential is derived so that the whole solution is fully analytical. Based on app
Appears in Collections:	[Department of Transportation Technology and Logistice Management] Journal Articles

Files in This Item:

File	Description	Size	Format
p_m620_0084.pdf		27Kb	Adobe PDF	284	View/Open