Characteristics of amplified spontaneous emission of high In content InGaN/GaN quantum wells with various Si doping conditions

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Title:	Characteristics of amplified spontaneous emission of high In content InGaN/GaN quantum wells with various Si doping conditions
Authors:	馬廣仁 Ma, Kung-Jen
Contributors:	機械工程學系 Mechanical Engineering
Date:	2003
Issue Date:	2014-06-27 03:16:26 (UTC+8)
Appears in Collections:	[Department of Mechanical Engineering] Journal Articles

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