High Current Driving of SnO2 Channel Thin Film Transistor Using HfO2/ZrO2 High-k
Gate Dielectrics

CHUR > College of Engineering > Department of Microelectronics > Seminar Papers > Item 987654321/33922

Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33922

Title:	High Current Driving of SnO2 Channel Thin Film Transistor Using HfO2/ZrO2 High-k Gate Dielectrics
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	TFT;channel;annealing treatments;high-k
Date:	2012
Issue Date:	2014-06-27 02:33:19 (UTC+8)
Abstract:	In this study, TFTs using SnO2 channels were formed on SiO2/Si substrates and subsequent annealing treatments. Furthermore, the high-k HfO2/ZrO2 is a promising gate dielectric because of its low leakage current and excellent compatibility with the SnO2 th
Appears in Collections:	[Department of Microelectronics] Seminar Papers

Files in This Item:

There are no files associated with this item.