High Performance and Low Driving Voltage Amorphous InGaZnO Thin-Film Transistors Using High-K HfSiO Dielectrics

CHUR > College of Engineering > Department of Microelectronics > Seminar Papers > Item 987654321/33912

Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33912

Title:	High Performance and Low Driving Voltage Amorphous InGaZnO Thin-Film Transistors Using High-K HfSiO Dielectrics
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	amorphous indium gallium zinc oxide;a-IGZO;RF
Date:	2011
Issue Date:	2014-06-27 02:33:04 (UTC+8)
Abstract:	Thin-film transistors were fabricated using amorphous indium gallium zinc oxide (a-IGZO) as channels and high-K material HfSiO as gate dielectric by RF sputtering. The influence of high-K PDA temperature variation on device characteristics was investigate
Appears in Collections:	[Department of Microelectronics] Seminar Papers

Files in This Item:

File	Description	Size	Format
s_I403_0175.pdf		25Kb	Adobe PDF	153	View/Open