Nickel Nanocrystals embedded in MANOS Low Temperature Poly-Silicon Thin Film Transistor with Low Programming/Erasing Voltage for Non-Volatile Memory Application

CHUR > College of Engineering > Department of Microelectronics > Seminar Papers > Item 987654321/33897

Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33897

Title:	Nickel Nanocrystals embedded in MANOS Low Temperature Poly-Silicon Thin Film Transistor with Low Programming/Erasing Voltage for Non-Volatile Memory Application
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	thin film transisto non-volatile memory application
Date:	2010
Issue Date:	2014-06-27 02:32:39 (UTC+8)
Abstract:	In this work, a MANOS thin film transistor nonvolatile memory with Ni-nanocrystals was fabricated. Ni-NCs size ranges and density were approximately 5 ~ 13 nm and 5 × 1011 cm-2, respectively. Afterthe low gate voltage stressing,the large memory window was
Appears in Collections:	[Department of Microelectronics] Seminar Papers

Files in This Item:

File	Description	Size	Format
s_I403_0173.pdf		29Kb	Adobe PDF	145	View/Open