Oxidation and structure scheme studies for sensitivity improvement of Si1−xGex nanowire biosensor

CHUR > College of Engineering > Department of Microelectronics > Seminar Papers > Item 987654321/33815

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Title:	Oxidation and structure scheme studies for sensitivity improvement of Si1−xGex nanowire biosensor
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	矽鍺;鍺濃縮;奈米線;生物感測器 SiGe;Ge-condendation;Nanowire;Bisosensor
Date:	2012
Issue Date:	2014-06-27 02:31:10 (UTC+8)
Abstract:	大的表面體積比可以提高感測器的靈敏度,最佳化的矽/矽鍺堆疊比例可以增加靈敏度. Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process c
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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