Chung-Hua University Repository:Item 987654321/33741
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 8557/14866 (58%)
Visitors : 1869581      Online Users : 882
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33741


    Title: Comparison of Characteristics of Rapid Thermal and Microwave Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition
    Authors: 賴瓊惠
    Lai, Chiung-Hui
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: E-beam evaporation;low pressure chemical vapor deposition;amorphous silicon thin
    Date: 2012
    Issue Date: 2014-06-27 02:29:23 (UTC+8)
    Abstract: In this study we use chemical and physical vapor depositions to fabricate amorphous
    silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave
    annealing (MWA) to activate or crystallize a-Si films and then observe t
    Appears in Collections:[Department of Microelectronics] Seminar Papers

    Files in This Item:

    File Description SizeFormat
    s_I403_0152.pdf25KbAdobe PDF257View/Open


    All items in CHUR are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback