SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION

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Title:	SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	生物感測器;靈敏度 SiGe-on-insulator;Biosensor;Passivation;Sensitivity
Date:	2012
Issue Date:	2014-06-27 02:28:18 (UTC+8)
Abstract:	富含高鍺濃度的絕緣層上矽鍺的表面鈍化效應 The increase of surface to volume ratio results in the enhancement of the sensitivity of the nanowires. Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire improves the sensitivity of the nanowire biosensor as a result of car
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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